The role of the InGaAs surface in selective area epitaxy of quantum dots by indium segregation
Identifieur interne : 00A561 ( Main/Repository ); précédent : 00A560; suivant : 00A562The role of the InGaAs surface in selective area epitaxy of quantum dots by indium segregation
Auteurs : RBID : Pascal:04-0166740Descripteurs français
- Pascal (Inist)
- 8107T, 6835B, 6837P, 6835D, 6172C, 8105E, 8115G, 6849S, 7867H, 7855C, 6843M, 6855J, Etude expérimentale, Indium composé, Gallium arséniure, Semiconducteur III-V, Point quantique semiconducteur, Couche mince semiconductrice, Croissance semiconducteur, Méthode MOCVD, Recuit, Morphologie surface, Reconstruction surface, Ségrégation surface, Désorption, Photoluminescence, Microscopie force atomique, RBS, Densité, Epitaxie phase vapeur, Couche épitaxique semiconductrice.
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- KwdEn :
- Annealing, Atomic force microscopy, Density, Desorption, Experimental study, Gallium arsenides, III-V semiconductors, Indium compounds, MOCVD, Photoluminescence, RBS, Semiconductor epitaxial layers, Semiconductor growth, Semiconductor quantum dots, Semiconductor thin films, Surface morphology, Surface reconstruction, Surface segregation, VPE, surface roughness.
Abstract
The surface of strained InGaAs films for selective regrowth of InAs nanostructures is investigated by atomic force microscopy and Rutherford backscattering. 3.3-nm-thick In0.33Ga0.67As films were annealed at temperatures between 400 and 800°C. Significant indium desorption was found to occur at temperatures above 550°C. The optimum parameters are presented for selective growth of InAs quantum dots having densities of 6.6×1010 cm-2 on In0.33Ga0.67As films. © 2004 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">The role of the InGaAs surface in selective area epitaxy of quantum dots by indium segregation</title><author><name sortKey="Yeoh, T S" uniqKey="Yeoh T">T. S. Yeoh</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Materials Science and Engineering, University of Illinois at Urbana Champaign, Urbana, Illinois 61801</s1><sZ>1 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Illinois</region></placeName><wicri:cityArea>Department of Materials Science and Engineering, University of Illinois at Urbana Champaign, Urbana</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="03"><s1>Department of Materials Science and Engineering and Department of Electrical and Computer Engineering, University of Illinois at Urbana Champaign, Urbana, Illinois 61801</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Illinois</region></placeName><wicri:cityArea>Department of Materials Science and Engineering and Department of Electrical and Computer Engineering, University of Illinois at Urbana Champaign, Urbana</wicri:cityArea></affiliation></author><author><name sortKey="Swint, R B" uniqKey="Swint R">R. B. Swint</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Department of Electrical and Computer Engineering, University of Illinois at Urbana Champaign, Urbana, Illinois 61801</s1><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Illinois</region></placeName><wicri:cityArea>Department of Electrical and Computer Engineering, University of Illinois at Urbana Champaign, Urbana</wicri:cityArea></affiliation></author><author><name sortKey="Elarde, V C" uniqKey="Elarde V">V. C. Elarde</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Department of Electrical and Computer Engineering, University of Illinois at Urbana Champaign, Urbana, Illinois 61801</s1><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Illinois</region></placeName><wicri:cityArea>Department of Electrical and Computer Engineering, University of Illinois at Urbana Champaign, Urbana</wicri:cityArea></affiliation></author><author><name sortKey="Coleman, J J" uniqKey="Coleman J">J. J. Coleman</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Materials Science and Engineering, University of Illinois at Urbana Champaign, Urbana, Illinois 61801</s1><sZ>1 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Illinois</region></placeName><wicri:cityArea>Department of Materials Science and Engineering, University of Illinois at Urbana Champaign, Urbana</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">04-0166740</idno><date when="2004-04-19">2004-04-19</date><idno type="stanalyst">PASCAL 04-0166740 AIP</idno><idno type="RBID">Pascal:04-0166740</idno><idno type="wicri:Area/Main/Corpus">00BB24</idno><idno type="wicri:Area/Main/Repository">00A561</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Annealing</term><term>Atomic force microscopy</term><term>Density</term><term>Desorption</term><term>Experimental study</term><term>Gallium arsenides</term><term>III-V semiconductors</term><term>Indium compounds</term><term>MOCVD</term><term>Photoluminescence</term><term>RBS</term><term>Semiconductor epitaxial layers</term><term>Semiconductor growth</term><term>Semiconductor quantum dots</term><term>Semiconductor thin films</term><term>Surface morphology</term><term>Surface reconstruction</term><term>Surface segregation</term><term>VPE</term><term>surface roughness</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>8107T</term><term>6835B</term><term>6837P</term><term>6835D</term><term>6172C</term><term>8105E</term><term>8115G</term><term>6849S</term><term>7867H</term><term>7855C</term><term>6843M</term><term>6855J</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium arséniure</term><term>Semiconducteur III-V</term><term>Point quantique semiconducteur</term><term>Couche mince semiconductrice</term><term>Croissance semiconducteur</term><term>Méthode MOCVD</term><term>Recuit</term><term>Morphologie surface</term><term>Reconstruction surface</term><term>Ségrégation surface</term><term>Désorption</term><term>Photoluminescence</term><term>Microscopie force atomique</term><term>RBS</term><term>Densité</term><term>Epitaxie phase vapeur</term><term>Couche épitaxique semiconductrice</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The surface of strained InGaAs films for selective regrowth of InAs nanostructures is investigated by atomic force microscopy and Rutherford backscattering. 3.3-nm-thick In<sub>0.33</sub>Ga<sub>0.67</sub>As films were annealed at temperatures between 400 and 800°C. Significant indium desorption was found to occur at temperatures above 550°C. The optimum parameters are presented for selective growth of InAs quantum dots having densities of 6.6×10<sup>10</sup> cm<sup>-2</sup> on In<sub>0.33</sub>Ga<sub>0.67</sub>As films. © 2004 American Institute of Physics.</div> </front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>84</s2></fA05><fA06><s2>16</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>The role of the InGaAs surface in selective area epitaxy of quantum dots by indium segregation</s1></fA08><fA11 i1="01" i2="1"><s1>YEOH (T. S.)</s1></fA11><fA11 i1="02" i2="1"><s1>SWINT (R. B.)</s1></fA11><fA11 i1="03" i2="1"><s1>ELARDE (V. C.)</s1></fA11><fA11 i1="04" i2="1"><s1>COLEMAN (J. J.)</s1></fA11><fA14 i1="01"><s1>Department of Materials Science and Engineering, University of Illinois at Urbana Champaign, Urbana, Illinois 61801</s1><sZ>1 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Electrical and Computer Engineering, University of Illinois at Urbana Champaign, Urbana, Illinois 61801</s1><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="03"><s1>Department of Materials Science and Engineering and Department of Electrical and Computer Engineering, University of Illinois at Urbana Champaign, Urbana, Illinois 61801</s1></fA14><fA20><s1>3031-3033</s1></fA20><fA21><s1>2004-04-19</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2004 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>04-0166740</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>The surface of strained InGaAs films for selective regrowth of InAs nanostructures is investigated by atomic force microscopy and Rutherford backscattering. 3.3-nm-thick In<sub>0.33</sub>Ga<sub>0.67</sub>As films were annealed at temperatures between 400 and 800°C. Significant indium desorption was found to occur at temperatures above 550°C. The optimum parameters are presented for selective growth of InAs quantum dots having densities of 6.6×10<sup>10</sup> cm<sup>-2</sup> on In<sub>0.33</sub>Ga<sub>0.67</sub>As films. © 2004 American Institute of Physics.</s0> </fC01><fC02 i1="01" i2="3"><s0>001B80A07T</s0></fC02><fC02 i1="02" i2="3"><s0>001B60H35B</s0></fC02><fC02 i1="03" i2="3"><s0>001B60A16C</s0></fC02><fC02 i1="04" i2="3"><s0>001B60H35D</s0></fC02><fC02 i1="05" i2="3"><s0>001B60A72C</s0></fC02><fC02 i1="06" i2="3"><s0>001B80A05H</s0></fC02><fC02 i1="07" i2="3"><s0>001B80A15G</s0></fC02><fC02 i1="08" i2="3"><s0>001B70I20R</s0></fC02><fC02 i1="09" i2="3"><s0>001B70H67H</s0></fC02><fC02 i1="10" i2="3"><s0>001B70H55C</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>8107T</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>6835B</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>6837P</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>6835D</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="05" i2="3" l="FRE"><s0>6172C</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="06" i2="3" l="FRE"><s0>8105E</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="07" i2="3" l="FRE"><s0>8115G</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="08" i2="3" l="FRE"><s0>6849S</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="09" i2="3" l="FRE"><s0>7867H</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="10" i2="3" l="FRE"><s0>7855C</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="11" i2="3" l="FRE"><s0>6843M</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="12" i2="3" l="FRE"><s0>6855J</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Gallium arséniure</s0><s2>NK</s2></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="16" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Point quantique semiconducteur</s0></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Semiconductor quantum dots</s0></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Couche mince semiconductrice</s0></fC03><fC03 i1="18" i2="3" l="ENG"><s0>Semiconductor thin films</s0></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Croissance semiconducteur</s0></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Semiconductor growth</s0></fC03><fC03 i1="20" i2="3" l="FRE"><s0>Méthode MOCVD</s0></fC03><fC03 i1="20" i2="3" l="ENG"><s0>MOCVD</s0></fC03><fC03 i1="21" i2="3" l="FRE"><s0>Recuit</s0></fC03><fC03 i1="21" i2="3" l="ENG"><s0>Annealing</s0></fC03><fC03 i1="22" i2="3" l="FRE"><s0>Morphologie surface</s0></fC03><fC03 i1="22" i2="3" l="ENG"><s0>Surface morphology</s0></fC03><fC03 i1="23" i2="3" l="ENG"><s0>surface roughness</s0><s4>INC</s4></fC03><fC03 i1="24" i2="3" l="FRE"><s0>Reconstruction surface</s0></fC03><fC03 i1="24" i2="3" l="ENG"><s0>Surface reconstruction</s0></fC03><fC03 i1="25" i2="3" l="FRE"><s0>Ségrégation surface</s0></fC03><fC03 i1="25" i2="3" l="ENG"><s0>Surface segregation</s0></fC03><fC03 i1="26" i2="3" l="FRE"><s0>Désorption</s0></fC03><fC03 i1="26" i2="3" l="ENG"><s0>Desorption</s0></fC03><fC03 i1="27" i2="3" l="FRE"><s0>Photoluminescence</s0></fC03><fC03 i1="27" i2="3" l="ENG"><s0>Photoluminescence</s0></fC03><fC03 i1="28" i2="3" l="FRE"><s0>Microscopie force atomique</s0></fC03><fC03 i1="28" i2="3" l="ENG"><s0>Atomic force microscopy</s0></fC03><fC03 i1="29" i2="3" l="FRE"><s0>RBS</s0></fC03><fC03 i1="29" i2="3" l="ENG"><s0>RBS</s0></fC03><fC03 i1="30" i2="3" l="FRE"><s0>Densité</s0></fC03><fC03 i1="30" i2="3" l="ENG"><s0>Density</s0></fC03><fC03 i1="31" i2="3" l="FRE"><s0>Epitaxie phase vapeur</s0></fC03><fC03 i1="31" i2="3" l="ENG"><s0>VPE</s0></fC03><fC03 i1="32" i2="3" l="FRE"><s0>Couche épitaxique semiconductrice</s0></fC03><fC03 i1="32" i2="3" l="ENG"><s0>Semiconductor epitaxial layers</s0></fC03><fN21><s1>110</s1></fN21><fN47 i1="01" i2="1"><s0>0415M000129</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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